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Quality and mechanical reliabiltiy assessment of wafer-bonded micromechanicla components

机译:晶圆键合微机械零件的质量和机械可靠性评估

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摘要

Strength tests and fracture mechanics models for Silicon wafer-bonded components are presented which can be applied during the development of bonding technologies, for the yield improvement and failure analysis as well as for the reliabiltiy assessemtn of micromechanical sensors and actuators. Special attention is given to the influences of atomic bonding strength, the interface voids and the noteches caused by etching steps prior to bonding on the fracture limit. If wafer-bonded inteerfaces are exposed to a mechanicla loading for an extended time, e.g. in the order to months or years, stress corrosion effects decrease the bonding strength. As a consequence, stressed sensors and actuatiors fabricated by wafer bonding can suddenly fail during appkication after a load-dependent lifetime. Based on an appropriate fracture mehcanics modle, the time-to-failure data could be theoretically predicted.
机译:提出了硅晶片键合元件的强度测试和断裂力学模型,这些模型可以在键合技术的开发过程中应用,可以提高产量,进行失效分析以及对微机械传感器和执行器进行可靠性评估。应特别注意原子键合强度,界面空隙和键合之前的蚀刻步骤对断裂极限造成的痕迹的影响。如果将与晶圆键合的界面长时间暴露在机械载荷下,例如在数月或数年的时间内,应力腐蚀作用会降低粘结强度。结果,在依赖于负载的寿命之后的应用期间,通过晶片键合制造的应力传感器和致动器可能突然失效。基于适当的断裂力学模型,可以从理论上预测失效时间。

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