Switched-current (SI) integrators with reduced effect of transistor mismatches

摘要

Switched-current (SI) circuits are widely used for analog sampled-data signal processing, due to their compatibility to the pure digital CMOS process. As their main building blocks are current mirrors, they suffer from the effects of MOS transistor parameters mismatch. In this paper, the Functional Block Diagram (FBD) of already known integrator circuits is modified in such a way that the number of required current mirrors is reduced. Thus, the behavior of the derived integrator topologies, with respect to the effect of MOS transistor parameters mismatch, is improved. A comparison is performed, concerning the performance of the proposed bilinear integrator circuits and those that are already introduced in the literature. For this purpose, a fifth-order Chebyshev lowpass SI filter transfer function was simulated. In the case of the proposed filter configurations, the obtained results show that their performance is improved in terms of the effects of MOS transistor parameters mismatch, DC power dissipation, and total required silicon area.