Integrated IGBT short-circuit protection structure: Design and optimization

摘要

Generally, short-circuit protections for IGBT are provided by the assistance of analogical discrete devices which can sense and protect. In this paper, we present a new NPT IGBT structure with integrated short-circuit protection. This structure is composed of an anode voltage sensor, a delay MOS transistor, a MOS transistor allowing IGBT turn-off and a Zener diode. The structure optimization depends on the flexible technological process developed for power structures and based on the functional integration concept. The protection structure optimization is presented and its functionality is verified by 2D simulations with ISE TCAD.