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A robust electro-thermal IGBT SPICE model: Application to short-circuit protection circuit design

机译:稳健的电热IGBT SPICE模型:在短路保护电路设计中的应用

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摘要

An optimized electro-thermal IGBT SPICE model based on the Kraus model was developed to allow reliable simulation at application level. A particular emphasis to the temperature dependence of physical parameters was given for both the on-state and breakdown conditions. The model was experimentally validated in steady state and transient operation on a Field-Stop trench-gate 30A-600 V commercial IGBT device. The effectiveness of the convergence-accuracy aspects was proved for the proposed model. The application to the short-circuit protection circuit design for a hard switched fault in an inverter motor-drive application was also analysed. The ability of the proposed IGBT model was experimentally verified with a simplified-equivalent circuit where a short condition was forced on the load, enabling the desaturation protection by the IGBT driver. The results show an accurate prediction of the device electro-thermal behaviour under short-circuit conditions, with a possible optimal design of the desaturation circuit parameters when the device experiences hard-switched-fault or fault-under-load events. (C) 2015 Elsevier Ltd. All rights reserved.
机译:开发了基于Kraus模型的优化电热IGBT SPICE模型,以在应用程序级别进行可靠的仿真。对于接通状态和击穿条件,都特别强调了物理参数对温度的依赖性。该模型在Field-Stop沟槽栅30A-600 V商用IGBT器件上的稳态和瞬态工作条件下进行了实验验证。所提出的模型证明了收敛精度方面的有效性。还分析了在逆变器电动驱动应用中用于硬开关故障的短路保护电路设计中的应用。所提出的IGBT模型的能力已通过简化等效电路进行了实验验证,该电路在负载上施加了短路条件,从而能够通过IGBT驱动器进行去饱和保护。结果显示了在短路条件下器件电热行为的准确预测,并且当器件遇到硬开关故障或负载不足故障事件时,可以对去饱和电路参数进行最佳设计。 (C)2015 Elsevier Ltd.保留所有权利。

著录项

  • 来源
    《Microelectronics & Reliability》 |2015年第10期|1971-1975|共5页
  • 作者单位

    Univ Naples Federico II, Dept Elect Engn & Informat Technol, I-80125 Naples, Italy;

    Univ Naples Federico II, Dept Elect Engn & Informat Technol, I-80125 Naples, Italy;

    Univ Naples Federico II, Dept Elect Engn & Informat Technol, I-80125 Naples, Italy;

    Univ Naples Federico II, Dept Elect Engn & Informat Technol, I-80125 Naples, Italy;

    Univ Naples Federico II, Dept Elect Engn & Informat Technol, I-80125 Naples, Italy;

    Vishay Intertechnol, Diodes Div, I-10071 Turin, Italy;

    Vishay Intertechnol, Diodes Div, I-10071 Turin, Italy;

    Vishay Intertechnol, Diodes Div, I-10071 Turin, Italy;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    IGBT; SPICE model; Electro-thermal; Short-circuit;

    机译:IGBT;SPICE模型;电热;短路;

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