A self-adaptive blanking time circuit for fast IGBT de-saturation short-circuit protection

摘要

This paper proposed a self-adaptive blanking time (SABT) circuit for fast IGBT de-saturation short-circuit detection. When IGBT normally turns on or experiences fault under load (FUL), the blanking time is implemented by detecting the variation of IGBT collector-to-emitter voltage VCE. While when IGBT is under hard switching failure (HSF), the blanking time is determined by detecting gate voltage VGE. The simulation with the UMC 0.6μm 700V technology indicates that the proposed SABT circuit can quickly detect FUL and HSF. Compared to the conventional blanking time circuit, the SABT circuit can shorten the fault detection time of FUL from 1.3μs to 35.3ns, while the fault detection time of HSF condition is reduced from 2.329μs to 294ns.