Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode

摘要

Two models have been used in order to explain the anomalies observed in a Ni/SiC-6H Schottky n-type diode I(V) characteristic. Both, parallel conduction and potential fluctuation models showed that the barrier's height is around a mean value of 1.86 V, corresponding to a factor of ideality of n = 1. Another conclusion was that φ_B~i = φ_B~C = 1.88 V. It has been, also, explained why the Arrhenius or Richardson plot (ln(I_s/T~2) versus 1/T) is not linear and why the area of the low barrier height A_1, representing a defective zone, is approximately about 0.12% of the total area contact.