首页> 外文期刊>Microelectronic Engineering >Nanomeasurement and fractal analysis of PZT ferroelectric thin films by atomic force microscopy
【24h】

Nanomeasurement and fractal analysis of PZT ferroelectric thin films by atomic force microscopy

机译:PZT铁电薄膜的纳米测量和分形分析的原子力显微镜

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

In this study, the radio frequency (RF) magnetron sputtering process is used to generate a PZT ferroelectric thin film on a silicon substrate. The surface characteristics of this lead zirconate titanate film Pb(Zr_x Ti_(1-x))O_3 is then investigated by means of an atomic force microscopy (AFM) method. The relationship between the temperature of the rapid thermal annealing (RTA) process and the characteristics of the resulting microstructure is also examined. Various aspects of the surface are investigated, including its roughness, its microstructure and its fractal characteristics. The results demonstrate that higher annealing temperatures reduce surface roughness and promote increased grain size due to the phase transformations which are induced within the microstructure. The fractal analysis reveals that the fractal dimension, D_s, increases for larger AFM scan images, and that the value of D_s falls within the range 2.10-2.50 depending upon the scanned length/area and is calculated by the structure function. Finally, it is determined that the phase transformations which occur at higher annealing temperatures result in higher fractal dimensions.
机译:在这项研究中,射频(RF)磁控溅射工艺用于在硅基板上生成PZT铁电薄膜。然后通过原子力显微镜(AFM)方法研究了锆钛酸铅钛膜Pb(Zr_x Ti_(1-x))O_3的表面特性。还检查了快速热退火(RTA)工艺的温度与所得微结构特征之间的关系。研究了表面的各个方面,包括表面粗糙度,微观结构和分形特征。结果表明,较高的退火温度可降低表面粗糙度,并由于微结构内引起的相变而促进晶粒尺寸的增加。分形分析表明,对于较大的AFM扫描图像,分形维数D_s增大,并且D_s的值取决于扫描的长度/区域,范围为2.10-2.50,并且由结构函数计算得出。最后,确定在较高退火温度下发生的相变导致较高的分形维数。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号