Optimization of HSQ resist e-beam processing technique on GaAs material

摘要

Hydrogen SilsesQuioxane is recently known as a negative tone e-beam resist for Si wafer technology. For Ⅲ/Ⅴ semiconductors, as GaAs reported here, the usual TMAH developer does not result in a good quality patterning; in order to overcome that, this paper presents the use of KOH-based developer as alternative processing. Its process conditions, that are described hereby, lead to higher contrast combined to higher process latitude. Finally, single lines down to 60 nm width and nanometer-gratings are investigated with a minimum of roughness illustrated by an AFM study.