Study on critical dimension of printable phase defects using an EUV microscope

摘要

We constructed an extreme ultraviolet microscopy (EUVM) system for actinic mask inspection that consists of Schwarzschild optics and an X-ray zooming tube. This system was used to inspect finished extreme ultraviolet lithography (EUVL) masks and Mo/Si glass substrates. A clear EUVM image of a 300-nm-wide pattern on a 6025 glass mask was obtained. The resolution was estimated to be 50 nm or less from this pattern. Programmed phase defects on the glass substrate were also used for inspection. The EUV microscope was able to resolve a programmed pit defect with a width of 40 nm and a depth of 10 nm and also one with a width of 70 nm and a depth of 2 nm. However, a 75-nm-wide 1.5-nm-deep pit defect was not resolved. Thus, in this study, one critical dimension of a pit defect was estimated to be a depth of 2 nm.