Annealing Effect On Physical And Electrical Characteristics Of Thin Hfo_2, Hfsi_xo_y And Hfo_yn_z Films On Si

摘要

We report the effect of annealing on electrical and physical characteristics of HfO_2, HfSi_xO_y and HfO_yN_z gate oxide films on Si. Having the largest thickness change of 0.3 nm after post deposition annealing (PDA), HfO_yN_z shows the lowest leakage current. It was found for both as-grown and annealed structures that Poole-Frenkel conduction is dominant at low field while Fowler-Nordheim tunneling in high field. Spectroscopic ellipsometry measurement revealed that the PDA process decreases the bandgap of the dielectric layers. We found that a decreasing of peak intensity in the middle HfO_yN_z layer as measured by Tof-SIMS may suggest the movement of N toward the interface region between the HfO_yN_z layer and the Si substrate during the annealing process.