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机译:三层纳米压印和湿法刻蚀制造的22 nm硅纳米线气体传感器
State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China;
State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China;
State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China;
State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China Micro and Nanotechnology Centre, Rutherford Appleton Laboratory, STFC, Didcot, Oxon OX11 0QX, UK;
State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China;
Micro and Nanotechnology Centre, Rutherford Appleton Laboratory, STFC, Didcot, Oxon OX11 0QX, UK;
State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China;
Micro and Nanotechnology Centre, Rutherford Appleton Laboratory, STFC, Didcot, Oxon OX11 0QX, UK;
trilayer nanoimprint; wet etching; silicon nanowire sensor; gas detection;
机译:在SU8 / SiO_2 / PMMA三层上通过纳米压印制造用于气体检测的硅纳米线传感器
机译:镀银时间对湿法化学刻蚀法制备硅纳米线阵列的影响
机译:氢氧化四甲铵/异丙醇湿法刻蚀对AFM光刻制备的硅纳米线的几何形状和表面粗糙度的影响
机译:用于气体检测的硅纳米线传感器的三层纳米压印制造和仿真
机译:苯并环丁烯聚合物与采用各向异性湿法刻蚀制造的硅微机械结构的集成。
机译:由ZnO / Si芯壳纳米线的湿化学蚀刻制造的硅纳米管
机译:湿化学蚀刻法制备镀银时间对硅纳米线阵列的影响