Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

Khatijah Aisha Yaacob; Siti Noorhaniah Yusoh

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Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

机译：氢氧化四甲铵/异丙醇湿法刻蚀对AFM光刻制备的硅纳米线的几何形状和表面粗糙度的影响

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《Beilstein Journal of Nanotechnology》 |2016年第1期|共页
作者
Khatijah Aisha Yaacob; Siti Noorhaniah Yusoh;
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1. SILICON NANOWIRE TRANSISTOR FABRICATED BY AFM NANOLITHOGRAPHY FOLLOWED BY WET CHEMICAL ETCHING PROCESS [J] . K. C. LEW, SABAR D. HUTAGALUNG International journal of nanoscience . 2010,第4期

机译：通过AFM纳米照相术制造的硅纳米电子晶体管，接着进行湿法化学蚀刻工艺
2. Nanoflash device with self-aligned double floating gates using scannin probe lithography and tetramethylammonium hydroxide wet etching [J] . J. T. Sheu, C. C. Chen, K. S. You, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2004,第6期

机译：具有自对准双浮栅的纳米闪光器件，采用斯堪宁探针光刻技术和四甲基氢氧化铵湿法蚀刻
3. Layer roughness reduction and light harvest from Ag nanowires on a silicon surface through wet etching embedding [J] . Han Dai, Hongjie Fang, Junfeng Zhao, Applied Physics Letters . 2017,第2期

机译：通过湿法蚀刻嵌入来减少硅表面上的Ag纳米线的层粗糙度并收集光
4. Effect of isopropyl alcohol (IPA) on etching rate and surface roughness of silicon etched in KOH solution [C] . Burham Norhafizah, Hamzah Azrul Azlan, Majlis Burhanuddin Yeop IEEE Regional Symposium on Micro and Nano Electronics . 2015

机译：异丙醇（IPA）对KOH溶液中刻蚀硅的刻蚀速率和表面粗糙度的影响
5. Field emission devices fabricated using potassium hydroxide anisotropic etching of silicon. [D] . Yun, Min Hee. 1998

机译：使用硅的氢氧化钾各向异性刻蚀制造的场发射器件。
6. Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography [O] . Siti Noorhaniah Yusoh, Khatijah Aisha Yaacob 2016

机译：氢氧化四甲铵/异丙醇湿法刻蚀对AFM光刻制备的硅纳米线的几何形状和表面粗糙度的影响
7. Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography [O] . Siti Noorhaniah Yusoh, Khatijah Aisha Yaacob 2016

机译：四甲基氢氧化铵/异丙醇湿蚀刻对aFm光刻制备的硅纳米线几何形状和表面粗糙度的影响

Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

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