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机译:利用逆注入双注入技术形成n沟道多晶硅薄膜晶体管
Department of Electronic Engineering, National Taiwan University of Science and Technology, Kee-Lung Rd., 106 Taipei, Taiwan;
Department of Electronic Engineering, Ming-Chi University of Technology, Tai-Shan, Taipei, Taiwan;
Department of Electronic Engineering, National Taiwan University of Science and Technology, Kee-Lung Rd., 106 Taipei, Taiwan;
Department of Electronic Engineering, Ming-Chi University of Technology, Tai-Shan, Taipei, Taiwan;
Department of Electronic Engineering, Ming-Chi University of Technology, Tai-Shan, Taipei, Taiwan;
Department of Electronic Engineering, Ming-Chi University of Technology, Tai-Shan, Taipei, Taiwan;
Department of Electronic Engineering, National Taiwan University of Science and Technology, Kee-Lung Rd., 106 Taipei, Taiwan;
polycrystalline-Si thin-film transistors; retrograde channel; leakage current;
机译:通过双源极/漏极注入形成n沟道多晶硅薄膜晶体管
机译:使用逆向p阱双注入方案形成横向700-V绝缘栅薄膜晶体管
机译:通过通过栅极侧壁间隔物的掺杂剂大角度倾斜注入来形成多晶硅薄膜晶体管
机译:使用随机和碳纳米管网络的P通道和N通道薄膜晶体管的基于解决方案的制造
机译:基于N沟道InGaAsP-InP的倒置通道技术器件(ICT)的设计,制造和表征,用于光电集成电路(OEIC):双异质结光电开关(DOES),异质结场效应晶体管(HFET),双极倒置沟道场-效应晶体管(BICFET)和双极型反向沟道光电晶体管(BICPT)。
机译:基于再生和注入方法的N沟道GaN金属氧化物半导体场效应晶体管的制作和评估
机译:高性能N沟道多晶锗薄膜晶体管通过连续波激光结晶和绿色纳秒激光退火源和排水掺杂剂活化
机译:在蓝宝石上的500 a薄膜硅中制造具有0.2微米栅极长度的n沟道金属氧化物半导体场效应晶体管。 (重新公布新的可用性信息)