机译:通过双源极/漏极注入形成n沟道多晶硅薄膜晶体管
Dept. of Electronic Engineering, National Taiwan University of Science and Technology, Kee-Lung Rd., 106 Taipei, Taiwan;
Dept. of Electronic Engineering, National Taiwan University of Science and Technology, Kee-Lung Rd., 106 Taipei, Taiwan;
Dept. of Electronic Engineering, Ming-Chi University of Technology, Tai-Shan, Taipei, Taiwan;
Dept. of Electronic Engineering, Ming-Chi University of Technology, Tai-Shan, Taipei, Taiwan;
Dept. of Electronic Engineering, Ming-Chi University of Technology, Tai-Shan, Taipei, Taiwan;
Dept. of Electronic Engineering, National Taiwan University of Science and Technology, Kee-Lung Rd., 106 Taipei, Taiwan;
polycrystalline-Si thin-film transistor; dual implantation; large-angle-tilt-implantation;
机译:利用逆注入双注入技术形成n沟道多晶硅薄膜晶体管
机译:轻掺杂漏极(LDD)注入条件对多晶Si薄膜晶体管器件特性的影响
机译:通过通过栅极侧壁间隔物的掺杂剂大角度倾斜注入来形成多晶硅薄膜晶体管
机译:利用氧等离子体处理的ITO源电极和漏电极的N沟道氟化铜酞菁薄膜晶体管
机译:带有金属置换的源极和漏极的薄膜晶体管
机译:凸源/漏极(RSD)和垂直掺杂漏极(LDD)多Si薄膜晶体管
机译:高性能N沟道多晶锗薄膜晶体管通过连续波激光结晶和绿色纳秒激光退火源和排水掺杂剂活化