Performance of (1 1 0) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes

摘要

The impact of local deep-amorphization (DA) and subsequent solid-phase epitaxial regrowth (SPER) are studied for the co-integration of devices with hybrid surface orientation. Thin-body p-channel transistors with 20 nm thick film and HfO_2 gate insulator/metal gate along several directions on a (1 10) substrate were fabricated and characterized. No deterioration of transconductance or threshold voltage was induced by DA/SPER process. Device co-integration using DA/SPER process is therefore a realistic option. (1 1 0) channel on (1 1 0) SOI film yields a 200% gain on the current for the (1 0 0) surface orientation. However, the benefit of it decreases with the channel length.