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机译:退火对Al / TiN / SiO_2 / p-Si结构的金属栅有效功函数的调制
State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China;
State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China;
Department of Solid State Science, Ghent University, Krijgslaan 281/SI. B-9000 Ghent, Belgium;
State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China;
State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China;
State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China;
State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China;
effective work function (ewf); flat band voltage (v_(fb)); metal gate; aluminum (al); titanium nitride (tin);
机译:金属化后退火对锗金属氧化物半导体器件中铂栅电极有效功函数调制的影响
机译:金属化后退火后HfO_2上TaN金属栅极的有效功函数调制
机译:Tan对Hfo_2和Sio_2的有效功函数对金属化后退火的依赖性
机译:用于Al / TiN / SiO_2 / P-Si结构栅极有效工作功能调制的退火效果
机译:系统评估金属栅电极的有效功函数及其对CMOS器件性能的影响。
机译:凝血酶适体修饰的金属有机框架纳米粒子:感知凝血酶和抗凝血药触发释放的功能性纳米结构。
机译:最后栅极的TiN / HfO2带边缘有效功函数,使用低温退火和选择性包层来控制界面成分