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首页> 外文期刊>Microelectronic Engineering >Fabricating bi-layered metallic wire-grid polarizers by nanoimprint and O_2 plasma etching
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Fabricating bi-layered metallic wire-grid polarizers by nanoimprint and O_2 plasma etching

机译:通过纳米压印和O_2等离子体刻蚀制备双层金属线栅偏振片

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摘要

This paper proposes an efficient process for fabricating bi-layered metallic wire-grid polarizers (WCP), which consist of a metallic (aluminum) layer on the top and a dielectric (PMMA) layer at the bottom. The proposed architecture was fabricated from the insertion structure, which was accomplished through only three steps, i.e., nanoimprint, aluminum deposition and chemical mechanical polishing (CMP), to embed the Al wire grating into PMMA substrate. By taking the advantage of the characteristic of the insertion structure, this technique fabricated PMMA wires with O_2 plasma etching by employing the nano-scale Al wire gratings as a mask to achieve bi-layered structures. The proposed bi-layered structures of metallic WGP can achieve superior optical performance, such as the extinction ratio of 497 and brightness gain of 1.18, from 0° to 40° of incident angles at a wavelength of 650 nm of incident light. In this paper, FE-SEM and FIB images show that the bi-layered wire-grid structure with wire gratings 100 nm in linewidth, 240 nm in pitch, and 300 nm in total height, i.e., 150 nm each for Al and PMMA wire gratings, was successfully replicated on a PMMA substrate of 1 cm~2. Various O_2 plasma etching periods were employed to accomplish the desirable bi-layered structures as well as its optical performance. In addition, we demonstrate that the deeper PMMA wire gratings of bi-layered structures cannot acquire the higher extinction ratio because of the increases of the P-polarization as well as the S-polarization.
机译:本文提出了一种制造双层金属线栅偏振器(WCP)的有效方法,该方法由顶部的金属(铝)层和底部的电介质(PMMA)层组成。所提出的架构是由插入结构制成的,该插入结构仅通过三个步骤即可完成,即纳米压印,铝沉积和化学机械抛光(CMP),以将Al线栅嵌入PMMA基板。通过利用插入结构的特性,该技术通过使用纳米级Al线栅作为掩模来实现双层结构,从而通过O_2等离子体刻蚀制造了PMMA线。所提出的金属WGP的双层结构可以在入射光的波长为650 nm时从0°到40°的入射角实现优异的光学性能,例如消光比为497,亮度增益为1.18。在本文中,FE-SEM和FIB图像显示了双层线栅结构,其线栅的线宽为100 nm,间距为240 nm,总高度为300 nm,即Al和PMMA线各为150 nm光栅成功地复制在1 cm〜2的PMMA基板上。采用各种O_2等离子体蚀刻周期来完成所需的双层结构及其光学性能。此外,我们证明,由于P极化和S极化的增加,双层结构的更深的PMMA线栅无法获得更高的消光比。

著录项

  • 来源
    《Microelectronic Engineering 》 |2013年第2期| 53-59| 共7页
  • 作者单位

    Department of Power Mechanical Engineering, National Tsing Hua University, 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan, ROC;

    Department of Power Mechanical Engineering, National Tsing Hua University, 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan, ROC;

    Department of Power Mechanical Engineering, National Tsing Hua University, 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan, ROC;

    Department of Power Mechanical Engineering, National Tsing Hua University, 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan, ROC;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    insertion structure; protrusion structure; bi-layered structure; metallic wire-grid polarizer (WGP); nanoimprint; O_2 plasma etching;

    机译:插入结构突出结构;双层结构金属线栅偏光片(WGP);纳米压印;O_2等离子体蚀刻;

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