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机译:MEMS电容开关的AlN介电膜电性能比较研究
Solid State Physics Section, University of Athens, GR-15784 Athens, Greece;
IESL - FORTH, GR-71110 Heraklion, Greece;
Solid State Physics Section, University of Athens, GR-15784 Athens, Greece;
Solid State Physics Section, University of Athens, GR-15784 Athens, Greece;
IESL - FORTH, GR-71110 Heraklion, Greece;
IESL - FORTH, GR-71110 Heraklion, Greece;
IESL - FORTH, GR-71110 Heraklion, Greece;
Solid State Physics Section, University of Athens, GR-15784 Athens, Greece;
RF MEMS switches; Dielectric charging; Aluminum nitride;
机译:纳米结构氮化硅电学性能的比较研究,有望在RF-MEMS电容开关中应用
机译:具有嵌入式CNT的SiNx膜的电性能,用于MEMS电容开关
机译:使用AlN的RF MEMS分流电容开关与$ hbox {Si} _ {3} hbox {N} _ {4} $介电相比
机译:使用AlN电介质的薄膜低压RF MEMS分流电容开关
机译:电容式RF MEMS中的介电电荷是用氮化硅和二氧化硅来开关的。
机译:ALD沉积La2O3 / Al2O3叠层和LaAlO3介电薄膜的电学性能研究
机译:mEms电容开关alN介质薄膜电性能的比较研究
机译:用于射频mEms电容开关的替代介电薄膜,使用原子层沉积的al2O3 / ZnO合金沉积