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机译:通过选择性电子束光刻和干法刻蚀对亚20纳米金纳米缝隙进行新颖的PMMA / NEB双层工艺
Fudan Univ, Sch Informat Sci & Engn, State Key Lab ASIC & Syst, Nanolithogrophy & Applicat Res Grp, Shanghai 200433, Peoples R China;
Fudan Univ, Sch Informat Sci & Engn, State Key Lab ASIC & Syst, Nanolithogrophy & Applicat Res Grp, Shanghai 200433, Peoples R China;
Fudan Univ, Sch Informat Sci & Engn, State Key Lab ASIC & Syst, Nanolithogrophy & Applicat Res Grp, Shanghai 200433, Peoples R China;
Fudan Univ, Sch Informat Sci & Engn, State Key Lab ASIC & Syst, Nanolithogrophy & Applicat Res Grp, Shanghai 200433, Peoples R China;
Fudan Univ, Sch Informat Sci & Engn, State Key Lab ASIC & Syst, Nanolithogrophy & Applicat Res Grp, Shanghai 200433, Peoples R China;
Natl Phys Lab, Teddington TW11 0LW, Middx, England;
Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai, Peoples R China;
Fudan Univ, Sch Informat Sci & Engn, State Key Lab ASIC & Syst, Nanolithogrophy & Applicat Res Grp, Shanghai 200433, Peoples R China;
Electron beam lithography; PMMA/NEB bilayer; Reactive ion etching; Sub-20 nm gold slits;
机译:HSQ / PMMA双层抗蚀剂的电子束光刻技术,用于负色调剥离工艺
机译:完全耗尽的金属氧化物半导体晶体管的亚30纳米混合光刻(电子束/深紫外)和蚀刻工艺
机译:分子尺法与电子束光刻技术相结合实现20nm以下混合纳米加工
机译:在非平面基板上进行电子束光刻的简便干法PMMA转移工艺
机译:吸附在金和砷化镓(001)上的链烷硫醇盐自组装单层的紫外光图案化,电子束光刻和特定位置的表面反应。
机译:用于高纵横比和高灵敏度电子束光刻的SML抗蚀剂处理
机译:电束诱导沉积沉积沉积沉积沉积的研究