Dry etch process for selectively etching non-homogeneous material bilayers

摘要

A plasma etching process employs a halogen liberating gas to selectively etch a top semiconductor layer of a bilayer with respect to a bottom semiconductor layer. A fluorine rich gas reacts with a top germanium layer for removal thereof, while forming a passivating surface layer on a bottom silicon layer to inhibit the silicon' plasma reaction therewith.