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Reliable peripheral anchor-assisted transfer printing of ultrathin SiO_2 for a transparent and flexible IGZO-based inverter

机译:透明,灵活的基于IGZO的逆变器可靠的外围锚辅助超薄SiO_2转移印刷

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摘要

This study demonstrates the utility of a printable ultrathin silicon dioxide (SiO2) substrate for developing highly transparent and flexible electronic devices. SiO2 provides a wider thermal process window than that of plastics, which is necessary for producing various electronics. To manipulate this fragile material, we employed a supportive handling substrate and transfer printing process using a sacrificial layer and protruding SU-8 anchors. In particular, we characterized the interfacial stress level and mechanics between the SiO2 substrate and the anchors during the retrieval process. We also manipulated the configuration of the corner of the SiO2 substrate to develop a reliable transfer printing process, which resulted in a high transfer yield with no distortion or fracture of the SiO2 patterns. As an example to demonstrate the utility of this method, we successfully developed a transparent and flexible thin-film inverter based on amorphous indium gallium zinc oxide (IGZO) with an 84.7% average optical transmittance on a polyethylene terephthalate (PET) film with an adhesive layer.
机译:这项研究证明了可印刷的超薄二氧化硅(SiO2)基板在开发高度透明和灵活的电子设备中的实用性。 SiO2提供的热加工窗口比塑料宽,这是生产各种电子产品所必需的。为了操纵这种易碎的材料,我们采用了支撑性处理基材,并使用了牺牲层和凸出的SU-8锚钉进行了转移印刷工艺。特别是,我们表征了在回收过程中SiO2基底和锚之间的界面应力水平和力学。我们还操纵了SiO2基板角部的形状,以开发出可靠的转移印刷工艺,从而实现了高转移率,而SiO2图案没有扭曲或断裂。作为演示此方法实用性的示例,我们成功开发了一种透明且柔性的薄膜逆变器,该逆变器基于无定形铟镓锌氧化物(IGZO),在带有粘合剂的聚对苯二甲酸乙二醇酯(PET)薄膜上的平均透光率为84.7%层。

著录项

  • 来源
    《Microelectronic Engineering》 |2018年第10期|15-22|共8页
  • 作者单位

    GIST, Sch Mat Sci & Engn, 123 Cheomdan Gwagiro Oryong Dong, Gwangju 500712, South Korea;

    GIST, Sch Mat Sci & Engn, 123 Cheomdan Gwagiro Oryong Dong, Gwangju 500712, South Korea;

    GIST, Sch Mat Sci & Engn, 123 Cheomdan Gwagiro Oryong Dong, Gwangju 500712, South Korea;

    Smalley Inst Nanoscale Sci & Technol, Dept Chem, 6100 Main St, Houston, TX 77005 USA;

    Seoul Natl Univ Sci & Technol, Dept Mfg Syst & Design Engn, 232 Gongneung Ro, Seoul 01811, South Korea;

    GIST, Sch Mat Sci & Engn, 123 Cheomdan Gwagiro Oryong Dong, Gwangju 500712, South Korea;

    GIST, Sch Mat Sci & Engn, 123 Cheomdan Gwagiro Oryong Dong, Gwangju 500712, South Korea;

    GIST, Sch Mat Sci & Engn, 123 Cheomdan Gwagiro Oryong Dong, Gwangju 500712, South Korea;

    GIST, Sch Mat Sci & Engn, 123 Cheomdan Gwagiro Oryong Dong, Gwangju 500712, South Korea;

    GIST, Sch Mat Sci & Engn, 123 Cheomdan Gwagiro Oryong Dong, Gwangju 500712, South Korea;

    Seoul Natl Univ Sci & Technol, Grad Sch NIP Fus Technol, 232 Gongneung Ro, Seoul 01811, South Korea;

    GIST, Sch Mat Sci & Engn, 123 Cheomdan Gwagiro Oryong Dong, Gwangju 500712, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Transparent electronics; Anchor-assisted transfer printing; Ultrathin device fabrication; Flexible inverter; SiO2; IGZO;

    机译:透明电子产品;锚定辅助转印;超声装置制造;柔性逆变器;SiO2;IGZO;

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