Fabrication of self- assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant

摘要

We demonstrate InGaN and AlGaN quantum dots (QDs) formation on AlGaN surfaces vir metal organic chemical vapor deposition (MOCVD). Si anti-surfactant was used in order to modify surface energy balance for changing growth mode from 2-dimensional step-flow growth to 3-dimensional nano-scale island formation. The average lateral size and thickness of the InGaN and AlGaN QDs are 10-20 nm and 5 nm, respectively. Intense photoluminescence (PL) was observed from InGare QDs even in room temperature. In and Al incorporation in InGaN and AlGaN QDs were estimated to be 22-52 and 1-5, respectively, from the PL spectrum.