Fabrication of Self assembling lnGaN and AlGaN Quantum Dots on AlGaN Surfaces Using Anti-surfactant

摘要

We demonstrate InGaN and AlGAN quantum dots (QDs) formation on AlGaN surfaces vir metal organic chemical vapor deposition (MOCVD). Si anti-surfactant was used in order to modify surface energy balance for changing growth mode from 2-dimensional step-now growth to 3-dimensional nano-scale island formation. The average lateral size and thickness of the InGaN and AlGaN QDs are 10-20 nm and 5 nm, respectively Intense photoluminescence (PL) was observed from InGaN QDs even in room temperature. In and Al incorporation in InGaN and AiGaN QDs were estimated to be 22-52 and 1-5 , respectively, from the PL spectrum.