Fabrication of Sub-Quarter-Micron Grating Patterns by Employing DUV Holographic Lithography

摘要

Sub-quarter-micron grating patterns with period as fine as 0.22 μ m have been obtained by combining DUV holographic lithography and silylation technique for the first time. A traditional chemical amplified resist (JSR KRF/K2G) originally working for single layer process at 248 nm wavelength was used for silylation. The silylation selectivity was improved by process control and a photoresist pattern with an aspect ration of 4 was obtained.