首页> 外国专利> DEVELOPER-SOLUBLE BOTTOM ANTI-REFLECTIVE COATING COMPOSITION FOR DUV(DEEP UV) LITHOGRAPHY AND PROCESS OF PRODUCING PATTERNED MATERIALS BY USING THE SAME

DEVELOPER-SOLUBLE BOTTOM ANTI-REFLECTIVE COATING COMPOSITION FOR DUV(DEEP UV) LITHOGRAPHY AND PROCESS OF PRODUCING PATTERNED MATERIALS BY USING THE SAME

机译:用于深紫外(DUV)光刻的显影剂可溶的底部抗反射涂料组合物以及使用该方法制备图案材料的过程

摘要

A bottom anti-reflective coating composition and a method for making a patterned material form on a substrate are provided to minimize the reflectivity between a resist and back layer in performing lithography technique. A bottom anti-reflective coating composition comprises a compound of the chemical formula 3. In the chemical formula 3, Q- is anion and contains one on the chemical formula 4. The composition also contains: a polymer containing an aromatic ring of the chemical formula 1; a compound of the chemical formula 3; and an organic solvent. In the chemical formula 1, 1=n190; R1 is one of structure of the chemical formula 2; R2, R4 and R5 is hydrogen or methyl group; R3 is -H, -CH3, and -C2H5 or - C(CH3)3.
机译:提供了底部抗反射涂料组合物和用于在基板上形成图案化材料形式的方法,以在进行光刻技术时最小化抗蚀剂和背层之间的反射率。底部抗反射涂料组合物包含化学式3的化合物。在化学式3中,Q-为阴离子,并且在化学式4中包含一个。该组合物还包含:包含化学式为芳族环的聚合物。 1;化学式3的化合物;和有机溶剂。在化学式1中,1 <= n <190; R1是化学式2的结构之一; R2,R4和R5是氢或甲基; R 3是-H,-CH 3和-C 2 H 5或-C(CH 3)3。

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