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Fabrication of hollow microtip electrode array with variable diameter using self-aligned etching process

机译:利用自对准刻蚀工艺制造直径可变的中空微尖端电极阵列

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In this paper, we propose the fabrication of a hollow microtip electrode array with variable diameter. The intended application of the fabricated electrode is the perfusion or aspiration at the localized area of a biological sample in a microfluidic system. The conductive electrode covered with an insulating layer formed the hollow microtip structure. The lower diameter and height of the fabricated hollow microtip electrode array were measured as approximately 4 and 35 mu m, respectively. A fabrication process for controlling the hollow diameter is proposed based on the self-aligned etching process of the sharp silicon microtip array without an additional photolithography mask. The silicon microtip was exposed only at the tip end by using the self-aligned etching process after coating the conductive and insulating layer. The area of the exposed silicon tip could be controlled by varying the self-aligned etching time, which determined the hollow dimeter after removing the silicon structure. The hollow diameter was adjusted from 0.94 to 2.82 mu m depending on the self-aligned etching time. Moreover, the proposed hollow microtip electrode array was characterized as the electrode to be used in electrochemical reaction measurements using cyclic voltammetry. Additionally, the perfusion of the fluid was demonstrated through the hollow microtip electrode assembled with a microfluidic channel.
机译:在本文中,我们提出了具有可变直径的中空微尖端电极阵列的制造。所制造的电极的预期应用是在微流体系统中对生物样品的局部区域进行灌注或抽吸。被绝缘层覆盖的导电电极形成中空的微尖端结构。所测量的中空微尖端电极阵列的下部直径和高度分别约为4和35μm。基于尖锐的硅微尖端阵列的自对准蚀刻工艺,提出了一种控制中空直径的制造工艺,而无需额外的光刻掩模。在涂覆导电和绝缘层之后,通过使用自对准蚀刻工艺仅在尖端处暴露硅微尖端。暴露的硅尖的面积可以通过改变自对准蚀刻时间来控制,该时间可以确定去除硅结构后的中空直径。根据自对准蚀刻时间,将中空直径从0.94调整为2.82μm。此外,所提出的中空微尖端电极阵列被表征为用于使用循环伏安法进行电化学反应测量的电极。另外,通过组装有微流体通道的中空微尖端电极证明了流体的灌注。

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