Intel ramps up EUV litho development, installs 300-mm microexposure system, sets up photomask pilot line

摘要

Extreme-ultraviolet (EUV) lithogra-Cphy has entered the development phase at Intel. The company said in early August that it had installed the first commercial microexposure tool (MET) at its RP1 fab in Hillsboro, OR, and established an EUV photomask pilot line at its Santa Clara, CA, mask house. "We are making progress toward implementing EUV lithography technology in manufacturing with the 32-nm process in 2009," said Ken David, Intel's director of components research for its technology and manufacturing group. The 2009 insertion point for EUV at 32 nm puts Intel some 4 years ahead of the 2013 node set in the most recent edition of the International Technology Roadmap for Semiconductors.