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机译:具有偶极层的高击穿电压AlGaN / GaN HEMT,适用于微波功率应用
Univ Elect Sci & Technol China State Key Lab Elect Thin Films & Integrated Devic Chengdu 610054 Sichuan Peoples R China;
passivation; gallium compounds; high electron mobility transistors; aluminium compounds; wide band gap semiconductors; III-V semiconductors; semiconductor device breakdown; microwave field effect transistors; dipole layer; microwave power applications; passivation layer; gate electrodes; gate-drain distance; DL-HEMT; high breakdown voltage high electron mobility transistor; drain electrodes; electric field distribution; FOM; cutoff frequency; gate field plate; on-state resistance; voltage 1130; 0 V; voltage 496; 0 V; distance 5; 0 mum; AlGaN-GaN;
机译:具有带电钝化层的高击穿电压AlGaN / GaN HEMT的设计和仿真,用于微波功率应用
机译:用于电力电子应用的Hybrid Algan缓冲层的高击穿电压P-Gan-Gate GaN HEMT的仿真设计
机译:具有P-GaN栅极和电力电子应用的Hybrid Algan缓冲层的新型高击穿电压和高开速GaN HEMT
机译:高k钝化层的AlGaN GaN Hemts击穿电压分析及缓冲层中的高受体密度
机译:使用AlGaN / GaN HEMT的大功率,宽带微波F类功率放大器的设计
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:高功率,高效率sspas中siC和蓝宝石mmIC上微波alGaN / GaN HEmT的沟道温度模型