机译:具有带电钝化层的高击穿电压AlGaN / GaN HEMT的设计和仿真,用于微波功率应用
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China|Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;
GaN HEMT; Breakdown voltage; Charged passivation layer; Microwave power;
机译:用于电力电子应用的Hybrid Algan缓冲层的高击穿电压P-Gan-Gate GaN HEMT的仿真设计
机译:具有偶极层的高击穿电压AlGaN / GaN HEMT,适用于微波功率应用
机译:具有P-GaN栅极和电力电子应用的Hybrid Algan缓冲层的新型高击穿电压和高开速GaN HEMT
机译:具有双钝化层的AlGaN / GaN HEMT中击穿电压增强的仿真
机译:使用AlGaN / GaN HEMT的大功率,宽带微波F类功率放大器的设计
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压