Enhanced Morphological Stability in Sb-Doped Ge

摘要

The axial heat processing (AHP) crystal growth technique was used to investigate the morphological stability of faceted solid/liquid (s/l) interfaces. Six Sb-doped Ge single crystals containing 2.3 × 10?2 to 2.3 × 10?1 at. pct Sb were grown at pulling rates of 10 to 20 mm/h. These include two bicrystals specifically designed to investigate the effect of slight misorientation on stability. Faceted growth with a kinetic supercooling on the order of 0.15 K was achieved, and a characteristic two-dimensional W instability boundary, an inverted crater in three dimensions, was observed. The crystals exhibited enhanced morphological stability over the predictions of the constitutional supercooling (CS) criterion and the Mullins and Sekerka (MS) stability criterion, with the highest stability in the center of the W. These results are examined with current analytical stability theories accounting for convection and kinetics. An alternate model is proposed based on anisotropic kinetics and the competition between lateral spreading on a faceted interface and the amplification rate of an interfacial perturbation.