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Influence of Bi_2O_3 addition on structure and dielectric properties of Ag(Nb_(0.8)Ta_(0.2))O_3 ceramics

机译:Bi_2O_3的添加对Ag(Nb_(0.8)Ta_(0.2))O_3陶瓷结构和介电性能的影响

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摘要

The structure and dielectric properties of perovskite Ag(Nb_(0.8)Ta_(0.2))O_3 ceramics were explored. A small amount of Bi_2O_3 was used to modify the dielectric properties of the ceramics. The addition ofBi_2O_3led the ceramics to a high densification and optimal dielectric properties. With the addition of 4.5 wt% Bi_2O_3, the permittivity of Ag(Nb_(0.8)Ta_(0.2))O_3 ceramics increased from 470 to 733, the dielectric loss decreased from 62 × 10~(-4) to 6.7 × 10~(-4), and the temperature coefficient of capacitance, TCC, decreased from 2004 ppm/℃ to —50 ppm/℃. The high permittivity obtained was due to the high densification and weak Ta-O or Nb-O bond strength in the oxygen octahedron that results from the addition of Bi_2O_3.
机译:探索了钙钛矿型Ag(Nb_(0.8)Ta_(0.2))O_3陶瓷的结构和介电性能。少量的Bi_2O_3用于改变陶瓷的介电性能。 Bi_2O_3的添加使陶瓷具有高密度和最佳介电性能。加入4.5 wt%Bi_2O_3后,Ag(Nb_(0.8)Ta_(0.2))O_3陶瓷的介电常数从470增加到733,介电损耗从62×10〜(-4)降低到6.7×10〜( -4),而电容的温度系数TCC从2004 ppm /℃降至-50 ppm /℃。所获得的高介电常数归因于由于添加Bi_2O_3而导致的氧八面体的高致密化和弱的Ta-O或Nb-O键强度。

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