High-temperature characterization of 4H-SiC Darlington transistors for low voltage applications

摘要

4H-SiC bipolar Darlington transistors (D-BJTs) for low voltage applications have been fabricated, simulated and characterized up to 300 ℃, where they exhibit a current gain of 460. The influence on D-BJT current gain of relative current capability of driver and output BJTs has been investigated, and the collector resistance has been identified as the main limitation for the D-BJTs.