Electrical characterisation of epitaxially grown 3C-SiC films

摘要

3C-SiC have been epitaxially grown through vapour phase expitaxy under a different grow conditions. Key electrical properties of these SiC layers have been characterised by fabrication and measurement of metal-SiC-metal devices. The electrical properties of SiC grown at different conditions have been analysed based on their structural and crystalline quality.