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首页> 外文期刊>Materials science forum >Characterisation of YSZ layers Deposited on Y_2O_3 Buffered Textured Tapes for Coated Conductors
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Characterisation of YSZ layers Deposited on Y_2O_3 Buffered Textured Tapes for Coated Conductors

机译:涂覆导体的Y_2O_3缓冲纹理带上沉积的YSZ层的表征

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摘要

Yttria-stabilized zirconia (YSZ) films were deposited on Y_2O_3/Ni-5at.%W substrates serving as the barrier layers for coated conductors by reel-to-reel direct-current (D.C.) magnetron reactive sputtering. The deposition parameters, such as the substrate temperature and tape moving speed, were systematically investigated. X-ray diffraction analysis confirmed that optimized YSZ/Y_2O_3 buffer layers showed excellent in-plane and out-of-plane textures. Atomic force microscope revealed a smooth, dense and crack-free surface. The subsequent CeO_2 cap layer and 1 um-thick YBa_2Cu_3O_(7-δ) film sequentially prepared, showing the critical current density J_c under 77K, self-field of 1.4MA/cm~2.
机译:通过盘对盘直流(D.C.)磁控管反应溅射,将Ytria稳定的氧化锆(YSZ)膜沉积在Y_2O_3 / Ni-5at。%W衬底上,该衬底用作涂覆导体的阻挡层。系统研究了沉积参数,例如衬底温度和带移动速度。 X射线衍射分析证实,优化的YSZ / Y_2O_3缓冲层显示出出色的面内和面外纹理。原子力显微镜显示出光滑,致密且无裂纹的表面。依次制备了后续的CeO_2盖层和1um厚的YBa_2Cu_3O_(7-δ)薄膜,显示了在77K,1.4MA / cm〜2自电场下的临界电流密度J_c。

著录项

  • 来源
    《Materials science forum》 |2014年第2014期|425-430|共6页
  • 作者单位

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    YSZ barrier layer; YBa_2Cu_3O_(7-δ); Reactive sputtering; Biaxial texture;

    机译:YSZ阻挡层;YBa_2Cu_3O_(7-δ);反应溅射;双轴织构;

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