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Meter-long CeO_2/YSZ/Y_2O_3 buffer layers for YBCO coated conductors using DC reactive sputtering

机译:米长的CeO_2 / YSZ / Y_2O_3缓冲层,用于使用DC反应溅射的YBCO涂层导体

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摘要

This paper reports CeO_2/YSZ/Y_2O_3 buffer layers deposited on biaxially textured NiW substrates by DC reactive sputtering in a reel-to-reel system. The effect of partial pressure of water vapor (P _(H2O)) on surface morphology and orientation of the Y_2O _3 films was examined. The obtained CeO_2/YSZ/Y _2O_3 buffer layers exhibit a highly biaxial texture, with in- and out-of-plane FWHM values respectively in the range of 6.0-7.0° and 4.5-5.5°. Crystallographic consistency of CeO_2/YSZ/Y _2O_3 along meter length is excellent. Atomic force microscope observation (AFM) reveals a smooth, continuous and crack-free surface with a Root-mean-square roughness (RMS) lower than 10 nm.
机译:本文报道了在卷到卷系统中通过DC反应溅射在双轴织构NiW衬底上沉积的CeO_2 / YSZ / Y_2O_3缓冲层。考察了水蒸气分压(P _(H2O))对Y_2O _3膜的表面形态和取向的影响。获得的CeO_2 / YSZ / Y _2O_3缓冲层表现出高度双轴织构,面内和面外FWHM值分别在6.0-7.0°和4.5-5.5°的范围内。 CeO_2 / YSZ / Y _2O_3沿米长的晶体学一致性极好。原子力显微镜观察(AFM)显示光滑,连续且无裂纹的表面,且均方根粗糙度(RMS)低于10 nm。

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