机译:SiC固溶过程中固溶体流动和横向温度分布对表面形貌的影响。
R&D Partnership for Future Power Electronics Technology (FUPET), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569 Japan,Tsukuba Research Laboratory, Hitachi Chemical Co., Ltd., 48 Wadai, Tsukuba, Ibaraki 300-4247 Japan;
R&D Partnership for Future Power Electronics Technology (FUPET), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569 Japan,Tsukuba Research Laboratory, Hitachi Chemical Co., Ltd., 48 Wadai, Tsukuba, Ibaraki 300-4247 Japan;
R&D Partnership for Future Power Electronics Technology (FUPET), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569 Japan,Tsukuba Research Laboratory, Hitachi Chemical Co., Ltd., 48 Wadai, Tsukuba, Ibaraki 300-4247 Japan;
R&D Partnership for Future Power Electronics Technology (FUPET), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569 Japan,Tsukuba Research Laboratory, Hitachi Chemical Co., Ltd., 48 Wadai, Tsukuba, Ibaraki 300-4247 Japan;
R&D Partnership for Future Power Electronics Technology (FUPET), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569 Japan,Tsukuba Research Laboratory, Hitachi Chemical Co., Ltd., 48 Wadai, Tsukuba, Ibaraki 300-4247 Japan;
Department of Materials Science & Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 Japan;
Department of Applied Chemistry, Tohoku University, 6-6-07, Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 Japan;
R&D Partnership for Future Power Electronics Technology (FUPET), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569 Japan,National Institute of Advanced Industrial Science and Technology (AIST), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569 Japan;
R&D Partnership for Future Power Electronics Technology (FUPET), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569 Japan,Tsukuba Research Laboratory, Hitachi Chemical Co., Ltd., 48 Wadai, Tsukuba, Ibaraki 300-4247 Japan;
R&D Partnership for Future Power Electronics Technology (FUPET), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569 Japan,National Institute of Advanced Industrial Science and Technology (AIST), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569 Japan;
SiC; Crystal Growth; Solution Flow; Temperature Distribution; Morphology;
机译:通过溶液流动控制改善离轴晶种上SiC溶液的表面形貌
机译:通过在溶液生长中使用温度梯度控制表面形态来稳定生长4H-SiC单多晶型
机译:在不同温度梯度条件下,由Si-Cr-C和Si-Cr-Al-C溶液生长的4H-SiC晶体的生长速率和表面形态
机译:通过在溶液生长中使用温度梯度控制表面形态来稳定生长4H-SiC单多晶型
机译:非润滑,错位,密合,多重连接表面的接触压力和磨损分布的数值解。
机译:高温处理后的纳米织构4H–SiC同质外延层的表面演变:形貌表征和石墨烯生长
机译:si-C溶液在不同过饱和度下生长的4H-siC单晶的生长速率和表面形貌
机译:负温度下表面活性物质水溶液蒸发动力学及生长