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机译:在不同温度梯度条件下,由Si-Cr-C和Si-Cr-Al-C溶液生长的4H-SiC晶体的生长速率和表面形态
R&D Partnership for Future Power Electronics Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan;
R&D Partnership for Future Power Electronics Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan;
R&D Partnership for Future Power Electronics Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan;
R&D Partnership for Future Power Electronics Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan;
R&D Partnership for Future Power Electronics Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,Tsukuba Research Laboratory, Hitachi Chemical Co., Ltd., Tsukuba, lbaraki 300-4247, Japan;
Department of Crystalline Materials Science, Nagoya University, Chikusa, Nagoya, Aichi 464-8603, Japan;
Department of Applied Chemistry, Tohoku University, Aoba, Sendai, Miyagi 980-8579, Japan;
R&D Partnership for Future Power Electronics Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,Tsukuba Research Laboratory, Hitachi Chemical Co., Ltd., Tsukuba, lbaraki 300-4247, Japan;
R&D Partnership for Future Power Electronics Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan;
A1. Roughening; A1. Surface structure; A2. Growth from solution; A2. Top seeded solution growth; B1. Silicon carbide;
机译:Si-C溶液在不同过饱和度下生长的4H-SiC单晶的生长速率和表面形态
机译:通过在溶液生长中使用温度梯度控制表面形态来稳定生长4H-SiC单多晶型
机译:温度梯度溶液生长法生长的块状ZnTe晶体的表征和化学表面织构化
机译:使用Si-C溶液在各种过度饱和下生长的4H-SIC单晶的生长速率和表面形态
机译:升高温度下水溶液中硫酸钙水合物的晶体生长和相变
机译:源材料的形态变化对4H-SiC单晶生长界面的影响
机译:si-C溶液在不同过饱和度下生长的4H-siC单晶的生长速率和表面形貌