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Single crystal, especially silicon single crystal, is grown under neck growth conditions of high pulling speed relative to the phase boundary axial temperature gradient
Single crystal, especially silicon single crystal, is grown under neck growth conditions of high pulling speed relative to the phase boundary axial temperature gradient
A single crystal growth process, in which the crystal neck portion is grown at a high ratio of pulling speed to phase boundary axial temperature gradient, is new. A single crystal growth process comprises growing the neck portion under conditions in which the quotient V/G(r) is greater than a constant Ckrit with a value of 1.3*10-3 cm2/K.min., where V = pulling speed, G(r) = axial temperature gradient at the solid/liquid phase boundary and r = radial distance from the center of the thin neck crystal.
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