Comparative study of characteristics of lateral MOSFETs fabricated on 4H-SiC (11-20) and (1-100) faces

摘要

We have fabricated the lateral MOSFETs on (11-20) and (1-100) faces and have compared the properties between these faces with various gate oxide processes. It has been demonstrated that (11 -20) and (1 -100) faces show comparable electrical properties with nitridation treatment on the gate oxide. Our result indicates that both faces exhibit the similar trend of the mobility vs. D_(it). Furthermore, it has been shown that NO POA is beneficial to both faces in achieving high channel mobility and suppressed V_t instability.