An ultrafast Ⅰ-Ⅴ measurement technique accounting for capacitive and leakage currents in reverse mode for SiC power devices

摘要

An ultrafast Ⅰ-Ⅴ measurement technique has been developed to measure simultaneously C-V and leakage parameters of SiC power devices. After considering the coupled contribution of both static (leakage current) and dynamic (capacitive current) aspects with respect to high dV/dt voltage ramps, a time-based characterization is detailed and validated on SiC Junction Barrier Schottky (JBS) power diodes.