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An ultrafast Ⅰ-Ⅴ measurement technique accounting for capacitive and leakage currents in reverse mode for SiC power devices

机译:一种超快速的Ⅰ-Ⅴ测量技术,可解决SiC功率器件反向模式下的电容和漏电流

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摘要

An ultrafast Ⅰ-Ⅴ measurement technique has been developed to measure simultaneously C-V and leakage parameters of SiC power devices. After considering the coupled contribution of both static (leakage current) and dynamic (capacitive current) aspects with respect to high dV/dt voltage ramps, a time-based characterization is detailed and validated on SiC Junction Barrier Schottky (JBS) power diodes.
机译:开发了一种超快的Ⅰ-Ⅴ测量技术,可以同时测量SiC功率器件的C-V和泄漏参数。考虑到静态(漏电流)和动态(电容性电流)方面对高dV / dt电压斜率的耦合影响后,详细描述了基于时间的特性,并在SiC结势垒肖特基(JBS)功率二极管上进行了验证。

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