Advance in the fabrication of ordered Ge/Si nanostructure array on Si patterned substrate by nanosphere lithography

摘要

The recent process in the fabrication of the ordered Ge/Si quantum dots (QDs) is reviewed. The fabrication step generally started on the preparation of patterned substrate prepared in advance by using several interesting methods, such as photo lithography, focus ion beam (FIB), reactive ion etching (RIE), and extreme ultraviolet lithography (EUV-IL) et al, which are introduced briefly in this article. Here, we'd like to focus on the detailed process of nanosphere lithography (NSL) which has the advantages of less cost and higher product compared with the referred methods. The ordered Ge nanostructures always show as Hexagonal close-packed array on the patterned Si substrate and have the advantages of potential applications in electronic and optoelectronic devices.