1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance

摘要

A detailed analysis of the typical static and dynamic performance of the new developed Infineon 1200V CoolSiC™ MOSFET is shown which is designed for an on-resistance of 45 mΩ. In order to be compatible to various standard gate drivers the gate voltage range is designed for -5 V in off-state and +15 V in on-state. Long term gate oxide life time tests reveal that the extrinsic failure evolution follows the linear E-model which allows a confident prediction of the failure rate within the life time of the device of 0.2 ppm in 20 years under specified use condition.