Investigation on the Effect of Ge Co-Doped Epitaxy on 4H-SiC Based MPS Diodes and Trench MOSFETs

摘要

The incorporation of Germanium (Ge) in 4H-SiC has recently being reported as enabling an increase of the electron mobility in n-type doped layers. The present work aims at evaluating the impact of the Ge doping on two types of SiC devices: Merged PiN-Schottky (MPS) diodes and Trench MOSFETs.