Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage

摘要

The scratch damage that caused the generation of double Shockley stacking faults (DSFs) in heavily nitrogen doped 4H-SiC crystal was investigated quantitatively. Scratch tests were carried out on 4H-SiC substrates with a nitrogen concentration of 2.6 × 10~(19) cm~(-3). A residual tensile stress of 40 MPa was detected around the scratch loaded at 30 mN with a diamond tip. DSFs were generated from this scratch by annealing at 1100°C for 2 h in Ar atmosphere. After annealing, the residual stress around the scratch was reduced to a tensile stress of 10 MPa. This result suggests that the reduction of residual stress around the scratch coincided with the formation of DSFs.