Glide of C-core partial dislocations along edges of expanding double-Shockley stacking faults in heavily nitrogen-doped 4H-SiC

摘要

The glide of C-core partial dislocations (PDs) that enclose double-Shockley stacking faults (DSFs) expanding in heavily nitrogen-doped 4H-SiC crystals was studied experimentally. We successively annealed a heavily doped SiC crystal with a nitrogen concentration of 4.9;;10(19);cm(?3), and the DSF expansion during high-temperature annealing was investigated with photoluminescence (PL) imaging and synchrotron X-ray topography techniques. The glide velocities of 90; and 30; C-core PDs for DSF expansion in the temperature ranges of 600 ;C?725 ;C and 975 ;C?1150 ;C, respectively, were evaluated by collating the PL and synchrotron X-ray topography images. Finally, the activation energies and pre-exponential factors for the gliding of the C-core PDs were obtained from the temperature dependences of the dislocation velocities.