机译:SIC外延反应器通过CLF_3气体在反应热量的帮助下清洁
Yokohama National University 79-5 Tokiwadai Hodogaya Yokohama 240-8501 Japan;
Yokohama National University 79-5 Tokiwadai Hodogaya Yokohama 240-8501 Japan;
Yokohama National University 79-5 Tokiwadai Hodogaya Yokohama 240-8501 Japan;
NuFlare Technology Inc. 8-1 Shinsugita Isogo Yokohama 235-8522 Japan;
NuFlare Technology Inc. 8-1 Shinsugita Isogo Yokohama 235-8522 Japan;
Kanto Denka Kogyo Co. Ltd. Kanda Awaji-cho Chiyoda Tokyo 101-0063 Japan;
Epitaxial growth; reactor cleaning; chlorine trifluoride; purified pyrolytic carbon;
机译:在垂直辐射加热反应器中外延生长4H-SiC厚层
机译:在垂直辐射加热VPE反应器中生长厚且低掺杂的4H-SiC外延层
机译:在垂直辐射加热VPE反应器中生长厚且低掺杂的4H-SiC外延层
机译:SIC外延反应器通过CIF_3气体在反应热量的帮助下清洁
机译:开发用于a-SiC和锰CMP的配方以及CMP后的钴清洗。
机译:焦耳热分解在4H-SiC上外延生长的多层石墨烯的拉曼光谱
机译:温壁行星反应器外延生长10×100 mm 4H-SiC
机译:siC衬底上生长的外延3C-siC,4H-siC和6H-siC薄膜缺陷的研究