Temperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and Modeling

摘要

Silicon carbide (SiC) MOSFET features low on-resistance per area even at high temperatures compared to a silicon (Si) counterpart with the same voltage rating. However, SiC MOSFET exhibits a unique behavior over operating temperatures due to the presence of interface trap charges. The effect of temperature on the on-resistance of SiC MOSFET has been studied through experimental measurements at difference temperatures from - 30 °C to 150 °C. The results show that high contribution of channel resistance is the critical factor to determine the behavior of SiC MOSFET with temperature.