Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)

摘要

The advantages of silicon carbide (SiC) over silicon are significant for high power and high temperature device applications. An analytical model for a lateral MOSFET that includes the effects of temperature variation in 6H-SiC poly-type has been developed. The model has also been used to study the device behavior in 4H-SiC at high ambient temperature. The model includes the effects of temperature on the threshold voltage, the carrier mobility, the body leakage current, and the drain and source contact region resistances. The MOSFET output characteristics and parameter values have been compared with previously measured experimental data. A good agreement between the analytical model and the experimental data has been observed. 6H-SiC material system provides enhanced device performance compared to 4H-SiC counterpart for lateral MOSFET.