Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching

摘要

We report a novel method to fabricate GaN-based nanorod light emitting diodes (LEDs) with controllable dimension and density using self-assemble nickel (Ni) and Ni/Si_3N_4 nano-masks and inductively coupled plasma reactive ion etching (ICP-RIE). Under the fixed Cl_2/Ar flow rate of 50/20 sccm, ICP/Bias power of 400/100 W and chamber pressure of 0.67 Pa, the GaN-based nanorod LEDs were fabricated with density of 2.2 x 10~9 to 3 x 10~(10)cm~(-2) and dimension of 150-60 nm by self assemble Ni nano-masks with various size. The size of Ni/Si_3N_4 nano-mask was control by the thickness Ni film ranging 150-50 A and rapid thermal annealing condition. The technique offers a controllable method of fabrication of GaN-based nanorod LEDs and should be applicable for fabrication of the others Ⅲ-Ⅴ nanoscale photonic and electronic devices.