Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching

著录项

• 来源
  《中国物理：英文版》 |2013年第10期|445-448|共4页
• 作者

  Wang Bo; Su Shi-Chen; He Miao; Chen Hong; Wu Wen-Bo; Zhang Wei-Wei; Wang Qiao;

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• 作者单位

  Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology,South China Normal University, Guangzhou 510631, China;

  Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics,Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

  Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology,South China Normal University, Guangzhou 510631, China;

  Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology,South China Normal University, Guangzhou 510631, China;

  Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics,Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

  Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology,South China Normal University, Guangzhou 510631, China;

  Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology,South China Normal University, Guangzhou 510631, China;

  Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology,South China Normal University, Guangzhou 510631, China;

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• 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词